| PART |
Description |
Maker |
| STD11N65M2 STP11N65M2 STU11N65M2 |
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
|
ST Microelectronics
|
| STW57N65M5 STI57N65M5 STP57N65M5 STB57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in D2PAK package
N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP and D2PAK packages
|
ST Microelectronics
STMicroelectronics
|
| STFI15NM65N |
N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh(TM) II Power MOSFET in I2PAKFP package
|
ST Microelectronics
|
| STP11N65M5 STU11N65M5 STD11N65M5 STF11N65M5 STB11N |
N-channel 650 V, 0.43 Ohm, 9 A MDmesh(TM) V Power MOSFET in TO-220FP package
N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
N-channel 650 V, 0.43 Ohm, 9 A MDmesh(TM) V Power MOSFET in DPAK package
|
STMicroelectronics
ST Microelectronics
|
| STL19N65M5 |
N-channel 650 V, 0.215 Ohm typ., 12.5 A MDmesh(TM) V power MOSFET in a PowerFLAT(TM) 8x8 HV package
|
ST Microelectronics
|
| STL42N65M5 |
N-channel 650 V, 0.070 Ohm typ., 22.5 A MDmesh(TM) V Power MOSFET in a PowerFLAT(TM) 8x8 HV package
|
ST Microelectronics
|
| STFW69N65M5 STW69N65M5 |
N-channel 650 V, 0.037 Ohm, 58 A MDmesh(TM) V Power MOSFET in TO-3PF package
N-channel 650 V, 0.037 Ω typ., 58 A MDmesh?V Power MOSFET in TO-3PF and TO-247 packages
N-channel 650 V, 0.037 Ω typ., 58 A MDmesh V Power MOSFET in TO-3PF and TO-247 packages
|
ST Microelectronics
STMicroelectronics
|
| STS8C6H3LL |
N-channel 30 V, 0.019 Ohm typ., 8 A, P-channel 30 V, 0.024 Ohm typ., 6 A STripFET(TM) Power MOSFET in a SO-8 package
|
ST Microelectronics
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| BSZ42DN25NS3G |
5 A, 250 V, 0.425 ohm, N-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC, TSDSON-8
|
Infineon Technologies AG
|
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